Flexible Non-Volatile Ferroelectric Polymer Memory with Gate-Controlled Multilevel Operation (Adv. Mater. 44/2012)
图评：这张图像对学术信息的关注更多，很多艺术设计是对情绪的表达，能淋漓尽致的表达情绪就是胜利。学术设计是一种肩挑两头的特殊设计，一段是学术信息一段是艺术信息，无论是创作还是鉴赏，如何把握学术和艺术的尺度都在不断的权衡和博弈中。
所以说，这张图是典型的放不下学术包袱的设计，并不是说不好，咖啡色和蓝色为主色调，用白色和黑色中间色来协调其他各种琐碎颜色。从原件每层放大到分子结构，每个层级的过渡也处理的很工整小心。（服务科学家资源平台供稿）
A flexible field effect transistor with a poly(3-hexylthiophene) (P3HT) active channel and a ferroelectric poly(vinlyidene fluoride-co-trifluoro ethylene) (PVDF-TrFE) insulator exhibits gate-voltage-controllable multilevel non-volatile memory characteristics with highly reliable data retention and endurance. The operating mechanism of the device is based on multileveled non-volatile current states of a polymeric semiconductor precisely controlled by various remnant polarization states of ferroelectric polymer domains. Further details can be found in the article by Cheolmin Park and co-workers on page 5910.
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