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Remarkable Enhancement of Hole Transport in Top-Gated N-Type Polymer Field-Effect Transistors by a High-k Dielectric for Ambipolar Electronic Circuits (Adv. Mater. 40/2012)
图评：标准的学术风格设计，没有比喻，没有拟人，没有玩笑，很工整的画面，很整齐的排布。连续图案是美学的常用手段，薄膜上的连续结构本身就构成了队列的美感，薄膜材质柔软和透亮，放大的原件结构也画的很干净整齐。对于没有经过多年美术训练的创作者来说，这种风格是很好的一个方向。
On page 5433, Yong-Young Noh, Antonio Facchetti, Kang-Jun Baeg, and co-workers report that high performance ambipolar complementary inverters and ring oscillators are provided by a remarkable enhancement of both holeinjection and transport for n-channel dominant N2200 OFETs. The significant enhancement of hole mobility in N2200 OTFTs is attributed to the strong dipoles in fluorinated high-k gate dielectric blend of P(VDF-TrFE):PMMA.
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